High-performance flexible nanoscale transistors based on ... - Nature
网页2021年6月17日 · Here, we report flexible nanoscale FETs based on 2D semiconductors; these are fabricated by transferring chemical-vapour-deposited transition metal dichalcogenides from rigid growth substrates...
A FinFET with one atomic layer channel - Nature Communications
网页2020年3月5日 · FinFETs are an evolution of metal-oxide-semiconductor field effect transistors (MOSFETs) featuring a semiconducting channel vertically wrapped by conformal gate electrodes.
Carbon nanotube transistors: Making electronics from molecules
网页2022年11月17日 · Semiconducting carbon nanotubes are robust molecules with nanometer-scale diameters that can be used in field-effect transistors, from larger thin-film implementation to devices that work in conjunction with silicon electronics, and can potentially be used as a platform for high-performance digital electronics as well as radio-frequency and sens...
Ultrashort vertical-channel MoS2 transistor using a self-aligned ...
网页2024年1月2日 · Here, the authors report a self-alignment process to fabricate vertical MoS2 transistors with sub-1 nm gate length and sub−50 nm channel length, exhibiting on-off ratios over 105 and on-state ...
Top-down scanning electron microscope (SEM) image of a 6-T …
网页Top-down scanning electron microscope (SEM) image of a 6-T FinFET SRAM cell with selective independent gating of the pass-gate transistors. The pull-down and pull-up FinFETs have single gates.
CD-SEM: Critical-Dimension Scanning Electron Microscope
网页A scanning electron microscope, or SEM, takes measurements by sending out an electron beam, which interacts with electrons in the material being scanned. That sends back signals, which are mapped by the equipment. The more critical dimensions that need to be mapped, the greater the amount of data that needs to be processed and stored.
Two-Dimensional Vertical Transistor with One ... - ACS Publications
网页7 小时之前 · Two-dimensional (2D) materials enable vertical field effect transistors (VFETs), which provide an alternative path for scaling down the channels of transistors. The challenge is the short channel effect when the …
网页In many cases, the sample can proceed directly to the Scanning Electron Microscope (SEM) as shown in the Single-Tool workflow. For fully processed devices and those with large metal structures, improving surface quality with another method enhances the results (see Multi-Tool workflow).
Hotspot Prediction: SEM Image Generation With Potential …
网页In this study, we developed a deep learning-based SEM image generation model to predict hotspots from layout patterns at the design stage. Our model combines a segmentation network and an image-to-image translation network based on a conditional generative adversarial network in parallel.
Cross section SEM image of a transistor with Pd/Ge/Al/Ti
网页This paper presents the results of electrical performance studies of the newly developed GaAs pHEMT transistors with Al-based metallization of the ohmic and barrier contacts, and fully copper ...