At the heart of an InGaN LED are InGaN quantum wells, buried within a GaN p-n junction. These devices often feature an AlGaN barrier, used to prevent the overflow of electrons from the quantum well.
Visible as electron-dense patches, these cluster within some of these fibrils from patients’ brains. What might they be? A paper published October 31 in PLoS Biology proposes that, for α-synuclein, ...
In a recent article, researchers presented an iridium single-atom catalyst coordinated with cobalt–iron hydroxides, showing enhanced performance for oxygen evolution reactions (OER). This catalyst ...
However, in current density functional theory (DFT) calculations, a complex self-consistent field (SCF) process of generating three-dimensional electron densities and solving quantum mechanical ...