At the heart of an InGaN LED are InGaN quantum wells, buried within a GaN p-n junction. These devices often feature an AlGaN barrier, used to prevent the overflow of electrons from the quantum well.
Visible as electron-dense patches, these cluster within some of these fibrils from patients’ brains. What might they be? A paper published October 31 in PLoS Biology proposes that, for α-synuclein, ...
Moiré materials, such as twisted bilayer graphene, are materials generally formed by stacking two or more layers of 2D materials on top of each other with a small lattice mismatch. This slight ...