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eeworldonline
11 小时
MOSFET design combines low RDS(on) with extended safe operating area
Infineon Technologies AG announces the new OptiMOS 5 Linear FET 2, a MOSFET designed to provide the ideal trade-off between ...
9 天
浮思特 | MOSFET技术发展掀起汽车电力电子行业的新潮流
随着汽车系统日益先进,对能够在更小、更高效设计中提供更高性能的组件的需求也在不断增加。电动机和先进驾驶辅助系统(ADAS)等应用需要可靠的电源管理解决方案,以减少热量和功率损失。
EuropaWire
13 小时
Infineon Unveils OptiMOS 5 Linear FET 2 MOSFET, Boosting Performance and Efficiency in AI ...
Infineon’s new OptiMOS 5 Linear FET 2 MOSFET enhances safe hot-swap operations in AI servers and telecom with improved SOA, ...
Electronic Design
3 天
Embarking on a New Frontier of Power Density with GaN
The latest power-conversion devices will help engineers achieve higher power in smaller spaces, thus providing the highest ...
2 天
Mitsubishi Electric to Ship Samples of SiC-MOSFET Bare Die for xEVs
Mitsubishi Electric Corporation (TOKYO: 6503) announced today that it will begin shipping samples of a silicon carbide (SiC) ...
https//beincrypto.com
9 天
FET Sets Sights on Recovering October Losses Starting with 10% Hike
FET price up 10%, driven by buyer strength and positive MFI. Resistance at $1.28 could lead to $1.44, or a drop to $1.10 if unmet.
Electronics Weekly
9 天
1,700V GaN mosfet IC from Power Integrations
Power Integrations has announced industry’s first 1,700V GaN transistor – as far as the company can tell. It is integrated ...
1 天
Tesla Cybertruck Gets 6th Recall Over Sudden Loss of Drive Power
Tesla's unmistakable Cybertruck has been recalled for the sixth time this year—this time, over its drive inverter.
Business Wire
2 天
Toshiba Starts Test-Sample Shipments of a Bare Die 1200V SiC MOSFET with Low On-Resistance ...
KAWASAKI, Japan--(BUSINESS WIRE)--Toshiba Electronic Devices & Storage Corporation (“Toshiba”) has developed "X5M007E120," a bare die [1] 1200V silicon carbide (SiC) MOSFET for automotive traction ...
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